SML20S67 5/99 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v dss i d i dm v gs v gsm p d t j , t stg t l i ar e ar e as drain C source voltage continuous drain current pulsed drain current 1 gate C source voltage gate C source voltage transient total power dissipation @ t case = 25c derate linearly operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 2 nCchannel enhancement mode high voltage power mosfets 200 67 268 20 30 370 2.96 C55 to 150 300 67 30 1300 v a a v w w/c c a mj absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) starting t j = 25c, l = 0.58mh, r g = 25 w , peak i l = 67a v dss 200v i d(cont) 67a r ds(on) 0.038 w w w w ? faster switching ? lower leakage ? 100% avalanche tested ? surface mount d 3 pak package starmos is a new generation of high voltage nCchannel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout. d s g d 3 pak package outline. dimensions in mm (inches) 15.95 (0.628) 16.05 (0.632) 1.04 (0.041) 1.15 (0.045) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 5.45 (0.215) bsc 2 plcs. 2.67 (0.105) 2.84 (0.112) 1.27 (0.050) 1.40 (0.055) 13.41 (0.528) 13.51 (0.532) 13.79 (0.543) 13.99 (0.551) 13 2 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 11.51 (0.453) 11.61 (0.457) 3.81 (0.150) 4.06 (0.160) pin 1 C gate pin 2 C drain pin 3 C source heatsink is drain.
SML20S67 5/99 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk characteristic test conditions min. typ. max. unit c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 67 268 1.3 300 2.9 i s i sm v sd t rr q rr (body diode) (body diode) v gs = 0v , i s = C i d [cont.] i s = C i d [cont.] , dl s / dt = 100a/ m s i s = C i d [cont.] , dl s / dt = 100a/ m s continuous source current pulsed source current 1 diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic min. typ. max. unit 0.34 40 r q jc r q ja junction to case junction to ambient c/w source C drain diode ra tings and chara cteristics thermal chara cteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see milCstdC750 method 3471 input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate C source charge gate C drain (miller) charge turnCon delay time rise time turn-off delay time fall time v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 1.6 w pf nc ns 4500 1160 410 175 25 80 14 21 50 10 caution electrostatic sensitive devices. anti-static procedures must be followed. characteristic test conditions min. typ. max. unit bv dss i dss i gss v gs(th) i d(on) r ds(on) v gs = 0v , i d = 250 m a v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 1.0ma v ds > i d(on) x r ds(on) max v gs = 10v v gs = 10v , i d = 0.5 i d [cont.] drain C source breakdown voltage zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage on state drain current 2 drain C source on state resistance 2 200 25 250 100 2 4 67 0.038 v m a na v a w st a tic electrical ra tings (t case = 25c unless otherwise stated) d ynamic chara cteristics
|
